Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829568 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
Nd-doped gadolinium vanadate (Nd:GdVO4) films have been grown on La3Ga5SiO14 (LGS) and sapphire substrates by pulsed laser deposition for the purpose of fabricating diode-pumped waveguide lasers. Films were grown over a range of temperatures from 600 to 700 °C in the presence of an oxygen pressure between 2 and 20 Pa. Films were characterized by X-ray diffraction, atomic force microscopy, and prism coupling method. Nd:GdVO4 films on different substrates show preferential growth along (2 0 0) with smooth surface. However, films fabricated on sapphire substrates have better crystallization quality compared with that on La3Ga5SiO14 (LGS) substrates according to the X-ray analysis. Films with sharper dips were observed on sapphire substrates in comparison with that on LGS substrates, which means a good confinement of the light in the corresponding mode.
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Physics and Astronomy
Condensed Matter Physics
Authors
Hongxia Li, Jiyang Wang, Huaijin Zhang, Guangwei Yu, Xiaoxia Wang, Liang Fang, Mingrong Shen, Zhaoyuan Ning, Jing Yang, Shiling Li, Xuelin Wang, Keming Wang,