| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829581 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
ZnO epitaxial films were grown on sapphire substrates by molecular beam epitaxy. Schottky diodes and metal-semiconductor-metal (MSM) photodetectors with ruthenium (Ru) electrodes were also fabricated. It was found that Schottky barrier height at the Ru/ZnO interface was 0.76Â eV. It was also found that we achieved a photocurrent to dark current contrast ratio of 225 from our ZnO MSM photodetectors. Furthermore, it was found that the time constant of our photodetectors was 13Â ms with three-order decay exponential function.
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Authors
T.K. Lin, S.J. Chang, Y.K. Su, B.R. Huang, M. Fujita, Y. Horikoshi,