Electrical conduction studies on Bi2Te3 thin films

The DC electrical conduction mechanism in vacuum evaporated Al-Bi2Te3-Al thin film sandwich system in the thickness range 350-3300 Å at different temperatures (300-483 K) was found to be Richardson-Schottky type. The samples showed a Log J vs. F1/2 dependence, from which the field lowering coefficient β was evaluated. The height Φ0 of the potential barrier was determined. Variation of activation energy with applied voltages and temperatures was investigated and the results are discussed. From the C-V analysis the flat band potential and the ionized charge density was found to be 2.37 eV and 7.992×1027 cm4, respectively. Hot probe method was employed to identify the type of conduction in these films and are found to be p-type.