| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829592 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
New data on flux growth of mixed crystals of R(Al,M)3(BO3)4, R=Y, Nd, M=Sc, Ga have been obtained. Single crystals were prepared by spontaneous nucleation under different conditions using a K2Mo3O10 based flux. The initial concentration of Sc and Ga doped RAl3(BO3)4 crystalline substance in fluxed melts was varied from 17 to 30 wt%. The average K distribution coefficients were found to be 0.98-0.31 for gallium, but no scandium was found in these materials. Splitting of trigonal prism faces is a specific morphological feature of the crystals grown.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
N.I. Leonyuk, E.V. Koporulina, V.V. Maltsev, A.V. Mokhov, O.V. Pilipenko,