Article ID Journal Published Year Pages File Type
9829631 Journal of Crystal Growth 2005 7 Pages PDF
Abstract
Nitrogen-doped ZnO films were deposited on silicon (1 0 0) substrate using zinc acetate and ammonium acetate aqueous solution as precursors by ultrasonic spray pyrolysis. Successful p-type doping can be realized at optimized substrate temperature. The p-type ZnO films show excellent electrical properties such as hole concentration of ∼1018 cm−3, hole mobility of ∼102 cm2 V−1 s−1 and resistivity of ∼10−2 Ω cm. In the photoluminescence measurement, a strong near-band-edge emission was observed, while the deep-level emission was almost undetectable in both undoped and N-doped ZnO films. The growth and doping mechanism of N-doped ZnO films were discussed.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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