Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829631 | Journal of Crystal Growth | 2005 | 7 Pages |
Abstract
Nitrogen-doped ZnO films were deposited on silicon (1 0 0) substrate using zinc acetate and ammonium acetate aqueous solution as precursors by ultrasonic spray pyrolysis. Successful p-type doping can be realized at optimized substrate temperature. The p-type ZnO films show excellent electrical properties such as hole concentration of â¼1018 cmâ3, hole mobility of â¼102 cm2 Vâ1 sâ1 and resistivity of â¼10â2 Ω cm. In the photoluminescence measurement, a strong near-band-edge emission was observed, while the deep-level emission was almost undetectable in both undoped and N-doped ZnO films. The growth and doping mechanism of N-doped ZnO films were discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jun-Liang Zhao, Xiao-Min Li, Ji-Ming Bian, Wei-Dong Yu, Can-Yun Zhang,