Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829635 | Journal of Crystal Growth | 2005 | 9 Pages |
Abstract
III-V semiconductor Indium Arsenide (InAs) nanocrystals embedded in silica glasses was synthesized by combining the sol-gel process and heat treatment in H2 gas. The size of InAs nanocrystals can be easily controlled via changing the In and As content in the starting materials and the heating temperature in a H2 gas atmosphere. Absorption measurements indicate a blue shift in energy with a reduction on the In and As content in the SiO2 gel glasses as a result of quantum confinement effects. A near-infrared photoluminescence with peak at 3.40 μm was observed at 6 K under 514.5 nm Ar+ laser excitation from InAs nanocrystals embedded in the silica gel glasses.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Heqing Yang, Banglao Zhang, Xiaoguang Wang, Xingjun Wang, Tie Li, Songhai Xie, Xi Yao,