Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829641 | Journal of Crystal Growth | 2005 | 7 Pages |
Abstract
Lateral, single-crystalline silicon nanowires were synthesized using chemical vapor deposition catalyzed by gold nanoparticles deposited on one of the vertical {1Â 1Â 1} sidewalls of trenches etched in Si(0Â 1Â 1) substrates. Upon encountering the opposing sidewalls of the trenches, the lateral nanowires formed a mechanically strong connection. The bridging connection at the opposing sidewall was observed using high-resolution transmission electron microscopy (TEM) to be epitaxial and unstrained silicon-to-silicon. Using energy-dispersive X-ray spectroscopy in TEM, gold could not be detected at the interface region where the nanowires formed a connection with the opposing sidewall silicon deposit but was detected on the surface adjacent to the impingement region. We postulate that a silicon-to-silicon connection is formed as the gold-silicon liquid eutectic is forced out of the region between the growing nanowire and the opposing sidewall.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S. Sharma, T.I. Kamins, M.S. Islam, R. Stanley Williams, A.F. Marshall,