Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829662 | Journal of Crystal Growth | 2005 | 10 Pages |
Abstract
We report on the epitaxial growth of hexagonal c-axis GaN on Si(0 0 1) substrates by metalorganic vapor-phase epitaxy (MOVPE). High-temperature (HT) AlN buffers were used. The use of 4° misoriented Si(0 0 1) substrates allows the growth of GaN layers with a single crystal orientation and low roughness and mosaïcity. Coalescence of the GaN films is obtained for thicknesses of about 1 μm. Crystal quality, strain state, polarity, and optical properties, assessed by transmission electron microscopy, X-ray diffraction and photoluminescence, are discussed and compared with those of GaN layers grown on Si(1 1 1) substrates.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Sylvain Joblot, Eric Feltin, Emmanuel Beraudo, Philippe Vennéguès, Mathieu Leroux, Franck Omnès, Marguerite Laügt, Yvon Cordier,