Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829666 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
Short wavelength (λ<5 μm) quantum cascade lasers are of current interest as they operate in the technologically important atmospheric 3-5 μm transparency window. For this wavelength range the GaInAs/AlAsSb-on-InP material system offers the advantage of a large conduction band offset of about 1.6 eV over the well-established lattice-matched GaInAs/AlInAs-on-InP material combination with a band offset of only 0.5 eV. In this paper, we report on molecular beam epitaxial growth and subsequent structural and compositional analysis of GaInAs/AlAsSb quantum wells as well as quantum cascade laser structures. Special emphasis has been laid on establishing a growth procedure which allows the growth of these structures without growth interruption at the GaInAs/AlAsSb interfaces. The epitaxial layer sequences were analyzed by high-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy. Finally, mesa waveguide GaInAs/AlAsSb QC lasers were fabricated emitting around 4.5 μm, which could be operated in pulsed mode up to 400 K.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C. Manz, Q. Yang, K. Köhler, M. Maier, L. Kirste, J. Wagner, W. Send, D. Gerthsen,