Ga1−xMnxSb grown on GaSb with mass-analyzed low-energy dual ion beam deposition

The Ga1−xMnxSb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga1−xMnxSb samples showed that the Mn ions were successfully implanted into GaSb substrate. Clear double-crystal X-ray diffraction patterns of the Ga1−xMnxSb samples indicate that the Ga1−xMnxSb epilayers have the zinc-blende structure without detectable second phase. Magnetic hysteresis-loop of the Ga1−xMnxSb epilayers were obtained at room temperature (293 K) with alternating gradient magnetometry.