Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829717 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
A new method is demonstrated to be effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks by inserting InAlGaN interlayers during the growth of GaN upon Si(1Â 1Â 1) substrate. Compared with GaN film without quaternary interlayer, GaN layer grown on InAlGaN compliant layers shows a five times brighter integrated PL intensity and a (0Â 0Â 0Â 2) High-resolution X-ray diffraction (HRXRD) curve width of 18Â arcmin. Its Ïmin, derived from Rutherford backscattering spectrometry (RBS), is about 2.0%, which means that the crystalline quality of this layer is very good. Quaternary InAlGaN layers, which are used as buffer layers firstly, can play a compliant role to endure the large mismatch-induced stress and reduce cracks during the growth of GaN epitaxy. The mechanisms leading to crack density reduction are investigated and results show that the phase immiscibility and the weak In-N bond make interlayer to offer tenability in the lattice parameters and release the thermal stress.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jiejun Wu, Xiuxun Han, Jiemin Li, Dabing Li, Yuan Lu, Hongyuan Wei, Guangwei Cong, Xianglin Liu, Qinsheng Zhu, Zhanguo Wang,