| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829758 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
α-MnSe epilayers were grown on (1 0 0) GaAs substrates by hot-wall epitaxy and their structural characteristics were studied. X-ray diffraction (XRD) and double crystal rocking curve measurements revealed that the epilayer is a homogeneous layer of MnSe with a rocksalt structure in the (1 0 0) direction. Asymmetric XRD revealed that biaxial tensile strain remained in a 200 nm thick α-MnSe epilayer.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y.-M. Yu, D.J. Kim, S.H. Eom, Y.D. Choi, M.-Y. Yoon, I.-H. Choi,