| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829764 | Journal of Crystal Growth | 2005 | 4 Pages |
Abstract
Unintentionally doped p-type Ga2Te3 semiconductor single crystals have been grown by a directional freezing method based on the Bridgman-Stockbarger crystal growth method. The switching effect of the compound has been investigated at various temperatures (140-300Â K). The current-voltage (I-V) characteristics of the compound show two different regions: an ohmic region at low-current densities and a negative differential resistance (NDR) region at moderate and higher current densities. This behavior has been explained by an electrothermal model.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Å. AydoÄan, T. Karacalı, Y.K. YoÄurtçu,