| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829791 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
Highly ordered germanium nanostructures are grown by molecular beam epitaxy (MBE) on molecularly bonded silicon (0 0 1) substrates. For high twist-angle-bonded substrates (twist angle as high as 20°), a one-dimensional organization of growth is induced by an interfacial network of mixed tilt dislocations. Depending on growth conditions, we were able to achieve an organized growth of germanium dots, hut islands and wires.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
V. Poydenot, R. Dujardin, F. Fournel, J.L. Rouvière, A. Barski,