Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829800 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
The evolution of InAs nanostructures grown by solid source molecular beam epitaxy on InP(0 0 1) substrates has been studied by atomic force microscopy (AFM), with specific emphasis on the effects of the incident V:III flux ratio. Wire structures oriented along ã1¯10ã are generally formed at moderate V:III flux ratios (â¼10:1). AFM images show that the wires are generally kinked with small three-dimensional (3D) islands appearing at the kinks. Higher V:III ratios (>100:1) lead to an increase in the number of kinks and the formation of much larger 3D features. By contrast, low V:III ratios (â¼2:1) favour the formation of small 3D islands (quantum dots) with densities of â¼5Ã1010 cmâ2. The results indicate that it is possible to produce arrays of InAs/InP quantum wires or quantum dots through careful control of the growth conditions.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H.J. Parry, M.J. Ashwin, J.H. Neave, T.S. Jones,