Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829801 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
The influence of pre-deposited phosphorus atoms on the formation of self-assembled Ge quantum dots (QDs) on Si(0Â 0Â 1) is investigated by solid-source molecular beam epitaxy (MBE) and atomic force microscopy (AFM). AFM images show that P atoms have a great influence on the size and density of Ge QDs. In the presence of 0.1Â ML P atoms, highly uniform self-assembled Ge QDs with a mean base size of 32Â nm and an areal density of 1.4Ã1011Â cmâ2 are obtained. These QDs are dome shaped with a size distribution width at half-maximum of 8Â nm, which have a higher aspect ratio and are more uniform in size than dots obtained with the presence of C atoms. The strain effect on the nucleation and growth of Ge dots induced by P atoms is discussed. In situ annealing reveals the non-metastable nature of the as-grown uniform dots and they are formed under highly kinetically limited condition.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J. Qin, F. Xue, Y. Wang, L.H. Bai, J. Cui, X.J. Yang, Y.L. Fan, Z.M. Jiang,