Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829803 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
ZnSe nano-wires (NWs) were fabricated on GaAs(1 1 1) and GaAs(1 1 0) substrates by the molecular beam epitaxy (MBE) technique via the vapor-liquid-solid (VLS) reaction. The size dependence of NW growth orientation was studied by varying the Au catalyst size. It was revealed that ã1 1 1ã orientation is the preferred growth direction for NWs with size ⩾30 nm while NWs with size around 10 nm prefer to grow along the ã1 1 0ã direction, with a small portion along the ã1 1 2ã direction. A phenomenological model based on the principle that crystalline nucleation favors the minimum of the total system energy was proposed to explain these observations. An approach to achieve vertical NWs with size around 10 nm was demonstrated on a GaAs(1 1 0) substrate.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S.K. Chan, Y. Cai, I.K. Sou, N. Wang,