MBE growth optimization of Sb-based interband cascade lasers

Antimonide-based type-II interband cascade diode lasers are rapidly becoming a viable technology for both in situ sensing and high-power laser applications in the 3-5μm range. Recently, this type of electrically pumped diode laser has been shown at the Jet Propulsion Laboratory to operate in continuous wave mode at heat-sink temperatures as high as 212 K near 3.3μm and 165 K at 5.4μm. In pulsed operation, lasers with emission wavelengths near 3.3μm can be operated at temperatures up to the 325 K limit of the measurement cryostat. Careful optimization of the growth conditions of the laser cascade and optical cladding regions must take place in order to achieve the high degree of crystalline quality necessary for optimum device performance.