Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829811 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
Using plasma-assisted molecular beam epitaxy (MBE), GaNxSb1âx films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310-460 °C). The films showed excellent crystalline quality and a nitrogen incorporation of 0-1.75% measured by X-ray diffraction. These materials should enable access to wavelengths in the 2-4 μm range.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
L. Buckle, B.R. Bennett, S. Jollands, T.D. Veal, N.R. Wilson, B.N. Murdin, C.F. McConville, T. Ashley,