| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829812 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
The aim of this paper is to establish the growth conditions for molecular beam epitaxy (MBE) of (Ga,Al)AsSb alloys lattice-matched to InP(0Â 0Â 1) substrate. The effects of the main parameters governing the alloy composition, determined by electron dispersive X-ray analysis (EDX) and high-resolution X-ray diffraction (HRXRD), are studied in detail. In particular, the variation of the composition as a function of the Sb/As flux ratio for different growth temperatures and different As/Ga flux ratios is reported.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C. Renard, X. Marcadet, J. Massies, O. Parillaud,