Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829813 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
The superlattice (SL) design parameters of a 50 period InAs/GaSb SL structure with InSb-like interfaces (IFs) were systematically varied around the 26Ã
InAs/27Ã
GaSb design in order to explore the parameter space for maximum photoresponse in the 3-5μm mid-infrared atmospheric window. Using previously optimized growth conditions, the SL structures were grown on p-type GaSb substrates by molecular beam epitaxy with precisely calibrated growth rates. The electrical properties of the SLs were characterized by magnetic field-dependent Hall effect measurements below the carrier freeze-out temperature of the p-type substrate. Multi-carrier analysis at 4.2 K determined an electron sheet carrier concentration of 8.5Ã1010cm-2 with a mobility of 8200cm2/Vs. Two sets of SLs were used in the optimization process: the first set with a fixed InAs width of 26 Ã
, and the second with a fixed GaSb width of 27Ã
. As the GaSb layer width varied from 15 to 27Ã
, the photoresponse cut-off wavelength shifted from 6.47 to 5.24μm. Similarly, as the InAs width varied from 26 to 13 Ã
, the cut-off wavelength shifted from 5.08 to 3.05μm. The strongest photoresponse in the 3-5μm mid-IR window was achieved with the InAs (20 Ã
)/GaSb (27Â Ã
) SL design.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H.J. Haugan, G.J. Brown, F. Szmulowicz, L. Grazulis, W.C. Mitchel, S. Elhamri, W.D. Mitchell,