A possibility of In-N fragments incorporation in InGaAsN MBE growth

We have investigated a possibility of the site-controlled InGaAsN epitaxy by using a new source material of hexakis-diethylamido-diindium ([In{N(C2H5)2}3]2). In the site-controlled epitaxy of the InGaAsN layer, the N atoms should be incorporated randomly and should also preferentially form In-N bonds during growth. The new source has been developed to satisfy these two requirements for the site-controlled epitaxy. Single-crystalline InN layer has been successfully obtained on a nitrided α-Al2O3 substrate by supplying only a [In{N(C2H5)2}3]2 beam. Polycrystalline InNAs has also been obtained on a nitrided α-Al2O3 substrate by [In{N(C2H5)2}3]2 and an As4 beam supplied simultaneously. Furthermore, phase separation into GaAs and InN phases has been observed in the layers grown under simultaneous irradiation of Ga, As4 and [In{N(C2H5)2}3]2 beams on a nitrided α-Al2O3 substrate. The results strongly indicate that site-controlled epitaxy can be expected to be achieved by using new source materials, such as [In{N(C2H5)2}3]2 that can produce the In-N fragments efficiently.