Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829824 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
Bulk InAsN films and monolayer-InAsN/GaAs single quantum wells (SQWs) have been grown on GaAs(0 0 1) substrates at 500 °C or below by RF-plasma-assisted molecular beam epitaxy (RF-MBE). Bulk InAsN films with fairly uniform compositions as revealed by X-ray diffraction have been successfully obtained up to the N concentration as high as 5.48%. The N incorporation is enhanced with decreasing growth temperature as expected for the metastable alloy. The Burstein-Moss effect is dominant for the optical properties near the band edge in the bulk InAsN films, giving a blue-shift of absorption edge due to the degenerate electrons in the conduction band. In the InAsN/GaAs SQWs, however, the BM effect is well suppressed to show the red-shift of photoluminescence (PL) peak energy due to the bandgap narrowing with the N incorporation, which is the manifestation of the huge bandgap bowing commonly found in the III-V-N-type alloys. This interpretation is justified when the difference in the shape of the density-of-states (DOS) function between the bulk and SQW is properly taken into account.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Kuroda, A. Nishikawa, R. Katayama, K. Onabe,