N-type doping of zinc selenide using a silver iodide thermal effusion source

N-type doping of epitaxial ZnSe layers has been achieved using the thermal dissociation of silver iodide to generate molecular iodine. The source is stable under MBE conditions and reproducible doping levels ranging from 1016 to 1019 cm−3 were achieved using this method. Low carrier concentrations of approximately 1015 cm−3 were observed in nominally undoped layers grown in the same system, indicating that there is no cross contamination. No silver contamination was found in doped layers.