Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829832 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
Successful growth of hexagonal ZnMgO films on Si(1Â 1Â 1) substrates is demonstrated by using Mg layer followed by MgO growth as a buffer layer. All the layers are grown by MBE using a radio frequency radical cell. The results of the glow discharge optical emission spectroscopy measurement indicate that Zn1âxMgxO films with Mg fraction x up to about 0.5 are obtained without phase separation. Moreover, these ZnMgO films are confirmed to be hexagonal c-oriented through the X-ray diffraction measurement and reflection high-energy electron diffraction observation. The lattice constant and cathodoluminescence peak energy are also investigated as a function of x.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Miki Fujita, Masanori Sasajima, Yuparwadee Deesirapipat, Yoshiji Horikoshi,