| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829835 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
Photoluminescence (PL) line width broadening of Zn1âxCdxTe/ZnTe multiple quantum well (MQW), grown on ZnTe (0Â 0Â 1) substrates by molecular beam epitaxy (MBE), has been investigated. During the growth, Cd-composition and thickness of QW are controlled by reflection high energy electron diffraction (RHEED) intensity oscillations. PL line width broadening due to an alloy/interface disorder is calculated and compared with experimental results. The PL line width varies closely related to the exciton radius and shows considerable agreement with theoretical values.
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Physical Sciences and Engineering
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Condensed Matter Physics
Authors
S.H. Park, J.H. Chang, M.N. Jung, Y.K. Park, K. Goto, T. Yao,