Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829838 | Journal of Crystal Growth | 2005 | 4 Pages |
Abstract
Epitaxial Lift-Off of ZnSe/ZnCdSe and MgS/ZnCdSe quantum well structures from their GaAs substrate has been achieved by using highly reactive MgS as the sacrificial layer. This technique has proved possible in II-VI semiconductor materials due to the huge contrast in the etch rates between the metastable MgS release layer and the II-VI quantum well materials. In this paper, we outline the epitaxial lift-off technique used and confirm the success of the new method using photoluminescence experiments taken before and after lift-off.
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Authors
C. Bradford, A. Currran, A. Balocchi, B.C. Cavenett, K.A. Prior, R.J. Warburton,