Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829843 | Journal of Crystal Growth | 2005 | 4 Pages |
Abstract
Ten-stacked InAs/GaAs quantum-dot infrared photodetector with two Al0.1Ga0.9As blocking layers at both sides of the structure is investigated. High responsivity 1.73 A/W under low applied voltage of -1.4 V is observed at 20 K with peak wavelength â¼7.6 μm. The appearance of 3-6 μm photovoltaic response at higher temperature is attributed to the enhancement of E1-E2 and E2-tunneling transition with increasing temperature. Higher photocurrent avalanche process under negative bias is due to the front blocking layer barrier lowering which results from strain-induced dislocations.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Shih-Yen Lin, Jim-Yong Chi, Si-Chen Lee,