| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829851 | Journal of Crystal Growth | 2005 | 4 Pages |
Abstract
In this paper, we report on the properties of AlGaN/GaN/AlGaN HEMT structures grown by molecular beam epitaxy on resistive Si(1Â 1Â 1) substrates. The properties of the AlGaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, the static performances of long gate length devices demonstrate their interest for power applications.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennegues, J. Massies,