Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

GaN/AlN multiple quantum well structures of 1, 5 and 20 periods were grown by molecular beam epitaxy (MBE). To investigate structural parameters, symmetrical scan (0 0 0 2) and reciprocal space mapping in the vicinity of the GaN (101¯5) plane were made by X-ray diffraction (XRD). The layer thickness, composition and relaxation were determined and gave good agreement with simulated results. The 20 period multiple quantum well (MQW) sample exhibited an intersubband resonance at 360 meV, which corresponds well to the structure data determined by XRD.