Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829861 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
We studied the influence of the growth temperature and Mg flux on the morphology, polarity inversion and p-type conductivity in GaN:Mg layers grown by plasma-assisted molecular beam epitaxy (PAMBE). Polarity-dependent wet etching, secondary ion mass spectroscopy and transmission electron microscopy are used to determine the polarity inversion of heavily Mg-doped GaN layers. Phase diagram for polarity inversion effect as a function of substrate temperature and Mg flux is presented. The maximum hole concentration measured in Hall effect experiments is 5Ã1017Â cmâ3 for Mg concentration of 1020Â cmâ3.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Feduniewicz, C. Skierbiszewski, M. Siekacz, Z.R. Wasilewski, I. Sproule, S. Grzanka, R. JakieÅa, J. Borysiuk, G. Kamler, E. Litwin-Staszewska, R. Czernecki, M. BoÄkowski, S. Porowski,