Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829863 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
The growth of GaAs, AlAs and AlAs/GaAs multilayers on GaAs (0Â 0Â 1) patterned substrates has been used as a probe of the group III adatom kinetics during molecular beam epitaxy. The deposition of GaAs and AlAs films on patterned substrates is significantly different due to modification of the inter-planar adatom migration and surface diffusion. This behaviour results in contrasting growth modes and different final ridge morphologies for the alternative deposition series. It also provides a route to either tune the final ridge profile or to produce alternative ridge structure geometries for novel device applications, from the deposition of AlAs, GaAs or multilayer structures.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
R.S. Williams, M.J. Ashwin, T.S. Jones, J.H. Neave,