Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829869 | Journal of Crystal Growth | 2005 | 7 Pages |
Abstract
The realisation of III-V quantum cascade lasers has initiated a strong interest in developing a Si/SiGe-based quantum cascade laser over the last 3Â years. Most efforts were focused on the growth of strain-balanced Si/SiGe superlattices on strain-relaxed SiGe virtual substrates. This paper discusses the progress so far and addresses some of the material issues related to the epitaxy of Si/SiGe quantum cascade structures, including strain-stress balance and production of strain-relaxed SiGe virtual substrates.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J. Zhang, X.B. Li, J.H. Neave, D.J. Norris, A.G. Cullis, R.W. Kelsall, S. Lynch, P. Towsend, D.J. Paul, P.F. Fewster,