Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829870 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
In this work, we present recent achievements on the low-temperature (â¼300 °C) molecular beam epitaxial growth of high Ge content Si/SiGe modulation-doped multiple quantum well structures on Si0.5Ge0.5 pseudosubstrates. High-resolution X-ray reflectivity and diffraction experiments performed at the Swiss Light Source synchrotron, as well as analysis by transmission electron microscopy, showed very good control of the growth parameters and interface r.m.s. roughness as low as 0.4 nm.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C.V. Falub, M. MeduÅa, E. Müller, S. Tsujino, A. Borak, H. Sigg, D. Grützmacher, T. Fromherz, G. Bauer,