Article ID Journal Published Year Pages File Type
9829870 Journal of Crystal Growth 2005 5 Pages PDF
Abstract
In this work, we present recent achievements on the low-temperature (∼300 °C) molecular beam epitaxial growth of high Ge content Si/SiGe modulation-doped multiple quantum well structures on Si0.5Ge0.5 pseudosubstrates. High-resolution X-ray reflectivity and diffraction experiments performed at the Swiss Light Source synchrotron, as well as analysis by transmission electron microscopy, showed very good control of the growth parameters and interface r.m.s. roughness as low as 0.4 nm.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
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