Article ID Journal Published Year Pages File Type
9829898 Journal of Crystal Growth 2005 5 Pages PDF
Abstract
A study of the “composition-pulling or lattice-latching” effect has been done for the case of GaInP epitaxial layers grown on GaAs and GaInAs substrates. The layers were grown simultaneously on two different substrates placed side by side under the same liquid solution. The layers were characterized by photoluminescence, secondary ion mass spectroscopy (SIMS) and X-ray diffraction. The chemical compositions of the layers were different for samples grown on substrates with different lattice constant. Moreover, the thickness of the epitaxial and of the transition layers also depends on the kind of substrate.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
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