Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829964 | Journal of Crystal Growth | 2005 | 9 Pages |
Abstract
In this paper, we report a unique sublimation method of a solid precursor for metalorganic chemical vapor deposition (MOCVD). We found out that the vaporization rate of dipivaloylmethanatopotassium [K(DPM)] was much improved by carrying out the single-melting and re-solidification (vitrification) process. Although the contact area of re-solidified K(DPM) and carrier gas was greatly decreased, a higher-concentration gas supply exceeding powder-like K(DPM) was attained by using this method. Furthermore, the long-time stability of the vaporization rate was also attained by stacking several disks formed of re-solidified K(DPM) in a precursor container. By using the re-solidified disk-shaped K(DPM) as a potassium precursor, an adequate deposition rate and the reproducibility of stable potassium niobate (KNbO3) crystal film preparation were confirmed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Atsushi Onoe, Yuzo Tasaki, Kiyofumi Chikuma,