| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9829979 | Journal of Crystal Growth | 2005 | 7 Pages |
Abstract
We investigated the growth of GaAsSb layers and quantum wells (QW) on GaAs (0Â 0Â 1) by MOVPE. Sb concentrations up to 12% were achieved at low arsine partial pressure and low growth temperature. Varying the tri-methyl antimony pressure primarily changed the growth rate but not the Sb incorporation. The in situ reflectance anisotropy spectrum during growth resembles that of a GaSb surface. Sb has a strong tendency towards segregation and is only incorporated after reaching a certain critical surface coverage. These findings can be explained by a very mobile and highly Sb enriched surface layer which forms by surface melting due to strain.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Pristovsek, M. Zorn, U. Zeimer, M. Weyers,