Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9829987 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
Indium nitride (InN) films were grown on sapphire substrates by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). Atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL) spectroscopy were used to characterize the InN films. The results show that the InN films have good crystallinity, with full-width at half-maximum (FWHM) of InN (0Â 0Â 0Â 2) DCXRD peak being 14Â arcmin. At room temperature, a strong PL peak at 0.79Â eV was observed. At 1.9Â eV or so, no peak was observed. In addition, it is found that the InN films grown with low-temperature (LT) InN buffer layer are of better quality than those without LT-InN buffer layer.
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Condensed Matter Physics
Authors
Hongling Xiao, Xiaoliang Wang, Junxi Wang, Nanhong Zhang, Hongxin Liu, Yiping Zeng, Jinmin Li, Zhanguo Wang,