Article ID Journal Published Year Pages File Type
9830064 Journal of Crystal Growth 2005 6 Pages PDF
Abstract
Chemical etching technique has been used for the first time to reveal dislocation structure of the cleavage plane of l-arginine hydrofluoride monohydrate (LAHF). Selective behaviour of the etchants for revealing macrosteps and cooperating spirals has been demonstrated. Presence of growth spirals on (1 0 0) face indicates that growth of this face is governed by screw dislocation mechanism. Microhardness measurement reveals that LAHF is harder than LAP.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
, ,