Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9830064 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
Chemical etching technique has been used for the first time to reveal dislocation structure of the cleavage plane of l-arginine hydrofluoride monohydrate (LAHF). Selective behaviour of the etchants for revealing macrosteps and cooperating spirals has been demonstrated. Presence of growth spirals on (1Â 0Â 0) face indicates that growth of this face is governed by screw dislocation mechanism. Microhardness measurement reveals that LAHF is harder than LAP.
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Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Tanusri Pal, Tanusree Kar,