| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9830078 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
In this paper, we report the fabrication of ferromagnetic semiconductor on GaN substrates by high-dose Cr ion implantation. Both magnetic and optical properties for Cr+-implanted GaN were studied by photoluminescence and superconducting quantum interference device. The results of photoluminescence reveal that the implanted chromium incorporates substitutionally on Ga site and forms deep acceptor level in GaN. The materials show ferromagnetic-like order up to 300Â K as indicated by temperature-dependent magnetization measurement. The M vs.T curve also implies the presence of different components to the magnetization in Cr+-implanted GaN.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jiqing Wang, Pingping Chen, Xuguang Guo, Zhifeng Li, Wei Lu,