| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9830085 | Journal of Crystal Growth | 2005 | 8 Pages |
Abstract
The indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from the two methods are then used as the simulation parameters to fit the X-ray diffractometry (XRD) measurements. The simulations indicate that the epitaxial parameters in our growth of InGaAsN/InGaAs/GaAsN epilayers are consistent throughout the three methods of analysis.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
W.K. Cheah, W.J. Fan, S.F. Yoon, T.K. Ng, W.K. Loke, D.H. Zhang, T. Mei, R. Liu, A.T.S. Wee,