Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9830100 | Journal of Crystal Growth | 2005 | 7 Pages |
Abstract
Since As doping in ZnO using ion implantation must always follow a damage caused by the energetic As ion penetration, there is a growing demand for crystallinity recovery from the surface damage through the post-implantation annealing. The results obtained from our experiments using double crystal X-ray diffraction and the atomic force microscopy indicate that the crystallinity recovery of the As-implanted sample presents the optimum condition when it is annealed at 800 °C for 1 h. From the Raman and photoluminescence measurements through the post-implantation annealing, the As-related optical properties were observed in As-implanted ZnO crystals. Thereby, we confirmed that the surface of the unimplanted ZnO was clearly converted into As-doped p-type ZnO layer by As ions.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
T.S. Jeong, M.S. Han, J.H. Kim, C.J. Youn, Y.R. Ryu, H.W. White,