Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9830139 | Journal of Crystal Growth | 2005 | 8 Pages |
Abstract
In situ observation experiments of semiconductor solution growth using a near-infrared microscope have been performed to investigate an influence of surface orientation of a substrate crystal upon the morphological change of the S/L interface. The orientation dependence of step kinetic coefficient at the interface in GaP/GaP growth was obtained under a reduced convection condition in order to evaluate a behavior of macrosteps during the growth. A morphological change of S/L interface at the early stage of GaAsxP1âx/GaP hetero-LPE growth was also discussed from the view point of the surface orientation dependence.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y. Inatomi, M. Kikuchi, R. Nakamura, K. Kuribayashi, I. Jimbo,