| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 9830147 | Journal of Crystal Growth | 2005 | 17 Pages | 
Abstract
												We are currently routinely growing 20-mm-diameter, 200-mm-long crystals of â¼0.5-kg weight with good uniformity of composition and good electrical properties for first-generation photoconductive IR detector programmes that require low carrier concentration n-type material. Compositions produced range from xâ¼0.7 (â¼1.3 μm) through to xâ¼0.0 (i.e. HgTe), the latter in the tail ends of the crystals.
											Keywords
												
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													Physical Sciences and Engineering
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											Authors
												P. Capper, C. Maxey, C. Butler, M. Grist, J. Price, 
											