Numerical study of the development of cellular structure during the Czochralski growth of GeSi bulk crystals

Particularities of pattern formation during direction solidification of an alloy were studied for the case of small constitutional undercooling. The phase-field model of Kim et al. was applied to compute the evolution of the interface numerically. The influence of pulling velocity and temperature gradient on the growth of the cellular structure was studied. We found a strong dependency of the wave length of the cellular structure on the temperature gradient in the regime of the Czochralski growth experiment (about 3000 K/m).