Angular dependence of lateral growth rate and kink-step structure on InP surface during liquid phase epitaxial condition

The angular dependence of lateral growth rate as a function of growth temperature (Tg) was determined for the liquid-phase epitaxy (LPE) of (0 0 1), (1 1 1)A,B and (1 1 0) InP. From the observation of post-growth variations of pre-formed mesa structures on InP (0 0 1) surface, it is shown that lateral growth rate was maximum parallel to [1 1 0] direction step at Tg<400∘C. It is indicated that kink density was the highest parallel to [1 1 0] direction on InP (0 0 1) surface. On (1 1 1)B surfaces, maximum lateral growth rate occurred at Tg=450∘C in the 〈112〉 directions. This implies that the kink-step density was the highest in these directions. However, at Tg=450∘C, lateral growth rate shows isotropic tendencies on (1 1 1)A surfaces, and the anisotropy decreases as the growth temperature increases. On (1 1 0) surfaces, lateral growth was observed near the 〈110〉 direction steps; however, lateral growth rate was extremely small near the 〈100〉 direction steps.