Element segregation during crystal growth processes of Ce2PdxCo1−xSi3 intermetallic compounds

Crystal growth experiments for various Ce2PdxCo1−xSi3 intermetallic compounds with AlB2-type hexagonal crystal structure were accomplished by floating zone methods. Congruent melting of the Ce2PdxCo1−xSi3 compounds was revealed. Considerable element segregation with accumulation of metallic components (Pd+Co) in the melt was observed, which gave rise to the occurrence of a Co-rich minority phase in the quenched last zone. In the crystals the transition metal content is reduced compared with the nominal value. The segregation behaviour is the reason for a strong tendency towards morphological instability of the melt-crystal interface. It is discussed in terms of existing phase diagram data and convective features.