Surface morphology of AlN and size dispersion of GaN quantum dots

The influence of the basic growth parameters (growth temperature, V/III ratio and growth rate) on the surface morphology of AlN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrate is reported. Optimized-growth conditions lead to a significant decrease of the surface roughness. The use of such surfaces as template to grow GaN quantum dots is shown to improve their size dispersion.