Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9830223 | Journal of Crystal Growth | 2005 | 7 Pages |
Abstract
The influence of the basic growth parameters (growth temperature, V/III ratio and growth rate) on the surface morphology of AlN grown by molecular beam epitaxy on sapphire (0Â 0Â 0Â 1) substrate is reported. Optimized-growth conditions lead to a significant decrease of the surface roughness. The use of such surfaces as template to grow GaN quantum dots is shown to improve their size dispersion.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Akihiro Matsuse, Nicolas Grandjean, Benjamin Damilano, Jean Massies,