| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9830272 | Journal of Crystal Growth | 2005 | 9 Pages |
Abstract
A comparative study of the stability of Ga- and N-polar GaN films was made in different gas ambients (N2, H2, NH3, HCl). The Ga-polar films were observed to undergo a dissociative sublimation, while the N-polar films formed condensed Ga in addition to the gaseous species. The difference in polarity affects the morphology and bonding on the surface, and thus, stability of the atoms bonded to the surface.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M.A. Mastro, O.M. Kryliouk, T.J. Anderson, A. Davydov, A. Shapiro,