| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9830287 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
Using bulk crystals of CuInSe2 (CIS) grown in an evacuated sealed quartz ampoule, diffusion of zinc in the temperature range (550-700 °C) was investigated. The computation of the parameters showed a coefficient of diffusion DZn varying from 10â11 to 10â10 cm2 sâ1 and an energy of activation of 0.41 eV. The results of optical analysis made on doped CuInSe2 showed that Zn can act as a donor and the energy EA of the acceptor level was found 23 meV.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Benabdeslem, N. Benslim, L. Bechiri, L. Mahdjoubi, E.B. Hannech, G. Nouet,